silicon epitaxial planar diode BAS316 features pb lead-free z very small plastic smd package. z high switching speed:max.4ns z continuous reverse voltage:max.100v z repetitive peak reverse voltage:max.100v z repetitive peak forward current:max.500ma applications sod-323 z surface mount fast switching diode ordering information type no. marking package code BAS316 a6 sod-323 maximum rating @ ta=25 unless otherwise specified characteristic symbol value unit dc reverse voltage v r 100 v forward current i f 300 ma power dissipation p d 200 mw junction and storage temperature rage t j ,t stg -65 to+150 diode semiconductor korea www.diode.kr
silicon epitaxial planar diode BAS316 electrical characteristics @ ta=2 5 unless otherwise specified characteristic symbol mi n max unit test condition reverse breakdown voltage v (br)r 100 - v i r =100 a forward voltage v f 0.62 0.715 0.855 1.0 1.25 v i f =1.0ma i f =10ma i f =50ma i f =150ma reverse current i r - 1.0 0.03 a v r =75v v r =25v capacitance between terminals c t - 1.5 pf v r =0,f=1.0mhz reverse recovery time t rr - 4.0 ns i f =i r =10ma,r l =100 ? typical characteristics @ ta=25 unless otherwise specified www.diode.kr diode semiconductor korea
silicon epitaxial planar diode BAS316 www.diode.kr diode semiconductor korea
silicon epitaxial planar diode BAS316 package outline plastic surface mounted package sod-323 sod-323 dim min max a 1.275 1.325 b 1.675 1.725 c 0.9 typical d 0.25 0.35 e 0.27 0.37 h 0.02 0.1 j 0.1 typical k 2.6 2.7 all dimensions in mm e k h d c b a j soldering footprint unit mm package information device package shipping BAS316 sod-323 3000/tape&reel
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